Paper Title
Page
Authors: Dirk Kranzer, Bruno Burger, Nicolas Navarro, Olivier Stalter
Abstract:Currently there are several silicon carbide (SiC) field effect or bipolar transistor types in development with normally-on and normally-off...
895
Authors: Peter A. Losee, Kevin Matocha, Steve Arthur, Eladio Delgado, Richard Beaupre, A. Pautsch, R. Ramakrishna Rao, Jeff Nasadoski, Jerome L. Garrett, Zachary Stum, Ljubisa Stevanovic, Rosa Ana Conte, Keith Monaghan
Abstract:The development of large area, up to 70m/1kV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of...
899
Authors: Shuhei Nakata, Shin Ichi Kinouchi, T. Sawada, T. Oi, Tatsuo Oomori
Abstract:For higher power application of SiC devices, we have designed and developed an inverter module with paralleled SiC-MOSFETs and SiC-SBDs.We...
903
Authors: Immo Koch, Wolf Rüdiger Canders
Abstract:Because of the fixed chip size of available sample devices a comparison of SiC-JFET and silicon IGBT with another fixed chip size...
907
Authors: Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, Josep Montserrat, André Lhorte, S. Carcouet, D. Leonard
Abstract:The expansion of the electrical communications and distribution networks strongly contribute to the increase in the risks of appearance of...
911
Authors: A. Maralani, Michael S. Mazzola, David C. Sheridan, Igor Sankin, Volodymyr Bondarenko
Abstract:The design of analog integrated circuits, for instance, the operational amplifiers, have been widely perfected with devices and processes...
915
Authors: Stefan Berberich, A. Goñi, Wolfgang Schäper, Manfred Kolm
Abstract:Of all the wide bandgap semiconductors, SiC is currently the most attractive material for aerospace applications. It offers significant...
919
Authors: E. Maset, Esteban Sanchis-Kilders, Pierre Brosselard, Xavier Jordá, Miquel Vellvehi, Phillippe Godignon
Abstract:Silicon Carbide 300V-5A Ni and W Schottky diodes with high temperature operation capability (up to 300°C) have been fabricated. This paper...
925
Authors: Philip G. Neudeck, David J. Spry, Liang Yu Chen, Carl W. Chang, Glenn M. Beheim, Robert S. Okojie, Laura J. Evans, Roger D. Meredith, Terry L. Ferrier, Michael J. Krasowski, Norman F. Prokop
Abstract:This paper updates the long-term 500 °C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated...
929
Authors: Hyun Hee Hwang, Jung Kyu Kim, Jong Mun Choi, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Hae Yong Lee
Abstract:GaN epitaxial layers were grown on sapphire substrate deposited an aluminum (Al) buffer layer using a hydride vapor phase epitaxy (HVPE)...
935
Showing 221 to 230 of 247 Paper Titles