Paper Title
Page
Authors: Piotr Caban, Kinga Kościewicz, Wlodek Strupiński, Jan Szmidt, Karolina Pagowska, Renata Ratajczak, Marek Wojcik, Jaroslaw Gaca, Andrzej Turos
Abstract:The influence of surface preparation of 4H-SiC substrates on structural properties of GaN grown by low pressure metalorganic vapour phase...
939
Authors: Elena Tschumak, Katja Tonisch, Jörg Pezoldt, Donat J. As
Abstract:Cubic gallium nitride epitaxial layers grown on differently carbonized silicon substrates were studied by high resolution X-ray diffraction....
943
Authors: Michał A. Borysiewicz, Eliana Kamińska, Anna Piotrowska, Iwona Pasternak, Rafał Jakieła, Elżbieta Dynowska
Abstract:Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by...
947
Authors: Lilyana Kolaklieva, Roumen Kakanakov, Plamen Stefanov, Volker Cimalla, S. Maroldt, Oliver Ambacher, Katja Tonisch, Florentina Niebelschütz
Abstract:Electrical, thermal and chemical properties of Ti/Al/Ti/Au ohmic contacts with different former Ti-Al ratio are investigated for application...
951
Authors: Olivier Ménard, Frédéric Cayrel, Emmanuel Collard, Daniel Alquier
Abstract:In this work, Ti/Al bilayer sputtered ohmic contacts on n-type Gallium Nitride films were studied as a function of process parameters such as...
955
Authors: Ferdinando Iucolano, Fabrizio Roccaforte, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Moschetti, Valeria Puglisi, Vito Raineri
Abstract:The recent improvement of GaN material quality launched new perspective for its application in power devices. However, ion-implanted...
959
Authors: Taku Horii, Tomihito Miyazaki, Yu Saito, Shin Hashimoto, Tatsuya Tanabe, Makoto Kiyama
Abstract:Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN...
963
Authors: Fabrizio Roccaforte, Ferdinando Iucolano, Filippo Giannazzo, Giuseppe Moschetti, Corrado Bongiorno, Salvatore Di Franco, Valeria Puglisi, Giuseppe Abbondanza, Vito Raineri
Abstract:Gallium nitride (GaN) and related alloys (AlxGa1-xN) are promising semiconductors for high-frequency and high-power devices applications. In...
967
Authors: Young Hwan Choi, Ji Yong Lim, Kyu Heon Cho, Young Shil Kim, Min Koo Han
Abstract:AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any...
971
Authors: M. Angeles Gonzalez-Garrido, Jesus Grajal, Pablo Cubilla, Claudio Lanzieri, Antonio Cetronio
Abstract:This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These...
975
Showing 231 to 240 of 247 Paper Titles