Paper Title
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Authors: Bernd Thomas, Christian Hecht, Birgit Kallinger
Abstract:In this paper we present results on the growth of low-doped thick epitaxial layers on 4° off-oriented 4H-SiC using a commercially available...
77
Authors: Anne Henry, Stefano Leone, Henrik Pedersen, Olof Kordina, Erik Janzén
Abstract:CVD growth of epitaxial layers with a mirror like surface grown on 75 mm diameter 4° off-axis 4H SiC substrates is demonstrated. The effect...
81
Authors: Philip Hens, Mikael Syväjärvi, Felix Oehlschläger, Peter J. Wellmann, Rositza Yakimova
Abstract:The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned...
85
Authors: Henrik Pedersen, Stefano Leone, Anne Henry, Franziska Christine Beyer, A. Lundskog, Erik Janzén
Abstract:Some aspects of the chloride-based CVD growth process have been investigated by using both the approach to add HCl to the standard precursors...
89
Authors: Stefano Leone, Henrik Pedersen, Anne Henry, Shailaja P. Rao, Olof Kordina, Erik Janzén
Abstract:Homoepitaxial growth of 4H-SiC on on-axis Si-face substrates is reported using hydrogen chloride together with silane and ethylene. In this...
93
Authors: Siva Prasad Kotamraju, Galyna Melnychuk, Yaroslav Koshka
Abstract:Chlorinated silicon precursor SiCl4 was investigated as a source of additional chlorine instead of or in combination with HCl during the low...
97
Authors: James D. Oliver, Brian H. Ponczak, Rinku P. Parikh, Raymond A. Adomaitis
Abstract:A method to improve the uniformity of epitaxial wafers grown in planetary rotation reactors through analysis of intentionally stalled wafer...
101
Authors: Rachael L. Myers-Ward, Brenda L. VanMil, Robert E. Stahlbush, S.L. Katz, J.M. McCrate, S.A. Kitt, Charles R. Eddy, D. Kurt Gaskill
Abstract:Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in...
105
Authors: Ning Zhang, Yi Chen, Edward K. Sanchez, David R. Black, Michael Dudley
Abstract:The influence of substrate surface scratches on the quality of CVD grown 4H-SiC homo-epitaxial layers has been studied using a combination of...
109
Authors: Kazutoshi Kojima, Hajime Okumura, Kazuo Arai
Abstract:We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of...
113
Showing 21 to 30 of 247 Paper Titles