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Silicon Carbide and Related Materials 2008

Materials Science Forum Volumes 615 - 617

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• p365 Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC   [ 181 K ]
  Authors: Koutarou Kawahara, Giovanni Alfieri, Tsunenobu Kimoto
• p369 The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC   [ 463 K ]
  Authors: Ioana Pintilie, Lars S. Løvlie, K. Irmscher, Günter Wagner, Bengt G. Svensson, Bernd Thomas
• p373 Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy   [ 892 K ]
  Authors: Franziska Christine Beyer, Henrik Pedersen, Anne Henry, Erik Janzén
• p377 Defects Introduced by Electron-Irradiation at Low Temperatures in SiC   [ 265 K ]
  Authors: Nguyen Tien Son, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Adam Gali, Erik Janzén
• p381 Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy   [ 274 K ]
  Authors: Masashi Kato, Kosuke Kito, Masaya Ichimura
• p385 Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy   [ 230 K ]
  Authors: Hideharu Matsuura, Miyuki Takahashi, Yoshitaka Kagawa, Shoichi Tano, Takayuki Miyake
• p389 Capacitance Spectroscopy Study of Midgap Levels in n-Type SiC Polytypes   [ 176 K ]
  Authors: Giovanni Alfieri, Tsunenobu Kimoto
• p393 Influence of Growth Rate and C/Si-Ratio on the Formation of Point and Extended Defects in 4H-SiC Homoepitaxial Layers Investigated by DLTS   [ 737 K ]
  Authors: Bernd Zippelius, Michael Krieger, Heiko B. Weber, Gerhard Pensl, Birgit Kallinger, Jochen Friedrich, Bernd Thomas
• p397 Defects in High Energy Ion Irradiated 4H-SiC   [ 600 K ]
  Authors: Gaetano Izzo, Grazia Litrico, Andrea Severino, Gaetano Foti, Francesco La Via, Lucia Calcagno
• p401 Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC   [ 199 K ]
  Authors: Patrick Carlsson, Nguyen Tien Son, Henrik Pedersen, Junichi Isoya, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh, Erik Janzén
• p405 Optical Identification of Mo Related Deep Level Defect in 4H and 6H SiC   [ 200 K ]
  Authors: Andreas Gällström, Björn Magnusson, Erik Janzén
• p409 Anti-Site Defects are Found at Large Distances from Localised H and He Ion Implantations   [ 1 M ]
  Authors: John W. Steeds, N. Peng, W. Sullivan
• p413 Use of Micro-PL to Monitor the Process of Damage Introduction, its Development and Removal by Annealing   [ 383 K ]
  Authors: John W. Steeds
• p417 Nanoimaging in SiC and Related Materials: Beyond Surface Morphology to Charge Transport and Physical Parameters Mapping   [ 1 M ]
  Authors: Vito Raineri, Filippo Giannazzo, Fabrizio Roccaforte
• p423 Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers   [ 525 K ]
  Authors: Swapna G. Sunkari, Hrishikesh Das, Carl Hoff, Yaroslav Koshka, Janna R. B. Casady, Jeff B. Casady