Paper Title
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Authors: Charles R. Eddy, Ping Wu, Ilya Zwieback, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Andrew E. Souzis, D. Kurt Gaskill
Abstract:Knoop microhardness assessments were conducted on a variety of 6H- and 4H-SiC substrates to assess any appreciable differences that may need...
323
Authors: Mariana A. Fraga, M. Massi, I.C. Oliveira, N.C. Cruz, S.G. Dos Santos Filho
Abstract:Amorphous SiCxNy films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon...
327
Authors: Alkyoni Mantzari, Christos B. Lioutas, Efstathios K. Polychroniadis
Abstract:The aim of the present work is to study the evolution and the annihilation of inversion domain boundaries in 3C-SiC during growth. For this...
331
Authors: Alexander A. Lebedev, Pavel L. Abramov, Nina V. Agrinskaya, Ven I. Kozub, Alexey N. Kuznetsov, Sergey P. Lebedev, Gagik A. Oganesyan, A.V. Chernyaev, Dmitrii Shamshur, Maria O. Skvortsova
Abstract:n-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and...
335
Authors: Teddy Robert, Sandrine Juillaguet, Maya Marinova, Thierry Chassagne, Ioannis Tsiaousis, N. Frangis, Efstathios K. Polychroniadis, Jean Camassel
Abstract:The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural...
339
Authors: D.V. Savchenko, Andreas Pöppl, Ekaterina N. Kalabukhova, Siegmund Greulich-Weber, Eva Rauls, Wolf Gero Schmidt, Uwe Gerstmann
Abstract:EPR and ESE in nitrogen doped 4H- and 6H-SiC show besides the well known triplet lines of 14N on quasi-cubic (Nc,k) and hexagonal (Nc,h)...
343
Authors: Erik Janzén, Adam Gali, Patrick Carlsson, Andreas Gällström, Björn Magnusson, Nguyen Tien Son
Abstract:A model is presented for the silicon vacancy in SiC. The previously reported photoluminescence spectra in 4H and 6H SiC attributed to the...
347
Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Takeshi Ohshima
Abstract:The Tv2a center in 4H-SiC irradiated by electrons at room temperature has been studied by pulsed EPR. Various techniques such as pulsed ELDOR...
353
Authors: Uwe Gerstmann, A.P. Seitsonen, Francesco Mauri, Hans Jürgen von Bardeleben
Abstract:In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the...
357
Authors: Adam Gali, T. Umeda, Erik Janzén, Norio Morishita, Takeshi Ohshima, Junichi Isoya
Abstract:We identify the negatively charged dicarbon antisite defect (C2 core at silicon site) in electron irradiated n-type 4H-SiC by means of...
361
Showing 81 to 90 of 247 Paper Titles