Silicon carbide powders were prepared by the carbothermal reduction method. The starting powders used were iron tailings and graphite. The XRD results showed that the main crystal phase was SiC and the main impurity was FexSiy in as-fabricated silicon carbide. The SEM results revealed that the grains of SiC-phase in as-fabricated silicon carbide were flaky-like or globular-like. It is found that the carbon addition and the reaction temperature play a key role to obtain SiC-phase, while the holding time and argon flow rate had a little effect on the yield of SiC as the excessive carbon addition are used. The optimum sintering temperature, holding time, argon flowing rate, the ratio of n(C): n(SiO2) are 1500 °C, 8 h, 0.6 L/min, 5:1, respectively.