Paper Title:
Buried-Layer Bared AZO/TiO2 Semiconductor Coupled Films and their Photocatalytic Properties
  Abstract

AZO/TiO2 double-layered semiconductor coupled films were prepared through sequentially depositing AZO and TiO2 films on glass substrates by radio frequency (RF) magnetron sputtering. PVP-pretreatment and post-annealing were performed on these double-layers to achieve an exposure of the AZO buried-layer in different baring conditions. The photocatalytic efficiencies of these buried-layer bared structures were measured through dye decomposition under ultraviolet irradiation. Silver mirror reactions were operated to explore a possible photocatalytic mechanism associated with these buried-layer bared conditions. The buried-layer bared AZO/TiO2 coupled films present 2 ~3 times of photocatalytic activity comparing to the normal AZO/TiO2 double-layered or single layered ones. It suggested that the self-built electrical field formed from coupling semiconductors reduces the recombination of electron-hole pairs, increases the yield of surface photogenerated charges, and enhances the photocatalysis.

  Info
Periodical
Materials Science Forum (Volumes 620-622)
Edited by
Hyungsun Kim, JienFeng Yang, Tohru Sekino and Soo Wohn Lee
Pages
707-710
DOI
10.4028/www.scientific.net/MSF.620-622.707
Citation
X. W. Zhang, C. C. Liu, G. R. Han, "Buried-Layer Bared AZO/TiO2 Semiconductor Coupled Films and their Photocatalytic Properties", Materials Science Forum, Vols. 620-622, pp. 707-710, 2009
Online since
April 2009
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$32.00
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