Buried-Layer Bared AZO/TiO2 Semiconductor Coupled Films and their Photocatalytic Properties
| Periodical | Materials Science Forum (Volumes 620 - 622) |
|---|---|
| Main Theme | Eco-Materials Processing and Design X |
| Edited by | Hyungsun Kim, JienFeng Yang, Tohru Sekino and Soo Wohn Lee |
| Pages | 707-710 |
| DOI | 10.4028/www.scientific.net/MSF.620-622.707 |
| Citation | Xi Wen Zhang et al., 2009, Materials Science Forum, 620-622, 707 |
| Online since | April, 2009 |
| Authors | Xi Wen Zhang, Cen Cen Liu, Gao Rong Han |
| Keywords | Buried-Layer Bareness, Magnetron Sputtering, Photocatalytic Efficiency, Semiconductor Coupled Film |
| Price | US$ 28,- |
AZO/TiO2 double-layered semiconductor coupled films were prepared through sequentially depositing AZO and TiO2 films on glass substrates by radio frequency (RF) magnetron sputtering. PVP-pretreatment and post-annealing were performed on these double-layers to achieve an exposure of the AZO buried-layer in different baring conditions. The photocatalytic efficiencies of these buried-layer bared structures were measured through dye decomposition under ultraviolet irradiation. Silver mirror reactions were operated to explore a possible photocatalytic mechanism associated with these buried-layer bared conditions. The buried-layer bared AZO/TiO2 coupled films present 2 ~3 times of photocatalytic activity comparing to the normal AZO/TiO2 double-layered or single layered ones. It suggested that the self-built electrical field formed from coupling semiconductors reduces the recombination of electron-hole pairs, increases the yield of surface photogenerated charges, and enhances the photocatalysis.
