Paper Title:
Medium Electric Field Electron Injection/Extraction at Metal-Dielectric Interface
  Abstract

The isothermal charging current and the isothermal discharging current in low mobility materials are analyzed either in terms of polarization mechanisms or in terms of charge injection/extraction at the metal-dielectric interface and the conduction current through the dielectric material. We propose to measure the open-circuit isothermal charging and discharging currents just to overpass the difficulties related to the analysis of the conduction mechanisms in dielectric materials. We demonstrate that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric interface and a reverse current related to the charge trapped into the shallow superficial or near superficial states of the dielectric and which can move at the interface in the opposite way that occurring during injection. Two important parameters can be determined (i) the highest value of the relaxation time for the polarization mechanisms which are involved into the transient current and (ii) the height of the potential barrier W0 at the metal-dielectric interface. The experimental data demonstrate that there is no threshold field for electron injection/extraction at a metal-dielectric interface.

  Info
Periodical
Materials Science Forum (Volumes 636-637)
Edited by
Luís Guerra ROSA and Fernanda MARGARIDO
Pages
437-443
DOI
10.4028/www.scientific.net/MSF.636-637.437
Citation
E. R. Neagu, C.J. Dias, M.C. Lança, R. Igreja, J. N. Marat-Mendes, "Medium Electric Field Electron Injection/Extraction at Metal-Dielectric Interface ", Materials Science Forum, Vols. 636-637, pp. 437-443, 2010
Online since
January 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Shinji Fukao, Yoshiaki Ito, Shinzo Yoshikado
23
Authors: K. Sasagawa, N. Yamaji, S. Fukushi
Abstract:As silicon ICs continue to scale down, several reliability issues have emerged. Electromigration- the transportation of metallic atoms by...
2958
Authors: Tsuyoshi Ishikawa, T. Katsuno, Y. Watanabe, H. Fujiwara, T. Endo
Chapter 3: Physical Properties and Characterization of SiC
Abstract:We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes...
371
Authors: Rudolf Elpelt, Bernd Zippelius, Daniel Domes
4.2 MOSFETs
Abstract:In switching applications with half-bridge like configurations the load current is commutated to the so-called reverse or body-diode of a...
817