Paper Title:
PL Properties of SiOx Obtained by HFCVD Technique
  Abstract

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

  Info
Periodical
Materials Science Forum (Volumes 636-637)
Edited by
Luís Guerra ROSA and Fernanda MARGARIDO
Pages
444-449
DOI
10.4028/www.scientific.net/MSF.636-637.444
Citation
T. Díaz-Becerril, G. García-Salgado, A. Coyopol, E. Rosendo-Andrés, H. Juárez, "PL Properties of SiOx Obtained by HFCVD Technique", Materials Science Forum, Vols. 636-637, pp. 444-449, 2010
Online since
January 2010
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$32.00
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