Paper Title:
Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method
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Periodical
Materials Science Forum (Volumes 638-642)
Main Theme
Edited by
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
Pages
1923-1928
DOI
10.4028/www.scientific.net/MSF.638-642.1923
Citation
K. Hasezaki, M. Ashida, T. Hamachiyo, H. Matsunoshita, Z. Horita, "Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method", Materials Science Forum, Vols. 638-642, pp. 1923-1928, 2010
Online since
January 2010
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