The behavior of thermal stresses and residual stresses in aluminum and copper thin films were investigated by the diffraction of X-rays and synchrotron radiations. Aluminum films were exposed in an elevated temperature in order to measure the thermal stress behavior in the films. Thermal stresses in the films in thin aluminum and copper films of 10 nm to 1000 nm thickness with and without passivation payer were measured in a sequence of thermal cycles. Stresses in thick films without passivation traced along with a hysteresis loop during thermal cycles, whereas the thin films of nano-meter size with AlN passivation layer behaved in a linear way with the temperature change. Thin copper films with and without AlN passivation layer were used to investigate strengthening mechanism of thin films. Specimens with different thickness of the films were subjected to a cyclic plane bending fatigue test. Residual stresses developed in the films were measured in a sequence of bending cycles to understand the effect of film thickness and passivation layer on mechanical properties of thin films. The film of 500 nm thickness developed less residual stresses in the film than thicker films. A passivation layer was effective to prevent residual stress development in the film.