Paper Title:
Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films
  Abstract

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

  Info
Periodical
Materials Science Forum (Volumes 638-642)
Main Theme
Edited by
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
Pages
2891-2896
DOI
10.4028/www.scientific.net/MSF.638-642.2891
Citation
P.C. Chang, K.H. Lee, A.N. Tu, S.J. Chang, K.L. Lee, "Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films", Materials Science Forum, Vols. 638-642, pp. 2891-2896, 2010
Online since
January 2010
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Price
$32.00
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Chapter 9: Composite Materials II
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