Paper Title:
Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga
  Abstract

Thin Ni/Al and Ni/Ga layers of different atomic ratios were codeposited onto Si(001) at room temperature followed by subsequent annealing. Influence of annealing temperature on morphology and composition of ternary disilicide NiSi2-xAlx and NiSi2-xGax layers was investigated by transmission electron microscopy. Addition of Al or Ga leads to a decrease of the disilicide formation temperature from 700°C down to at least 500°C. Depending on the composition closed, uniformly oriented NiSi2-xAlx and NiSi2-xGax layers were observed after annealing at 900°C, whereas reaction of a pure Ni film with Si leads to the island formation with a mixture of A- and B-type orientations.

  Info
Periodical
Materials Science Forum (Volumes 638-642)
Main Theme
Edited by
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
Pages
2938-2943
DOI
10.4028/www.scientific.net/MSF.638-642.2938
Citation
A.V. Mogilatenko, F. Allenstein, M.A. Schubert, M. Falke, G. Beddies, W. Neumann, "Structural Changes in Nickel Silicide Thin Films under the Presence of Al and Ga", Materials Science Forum, Vols. 638-642, pp. 2938-2943, 2010
Online since
January 2010
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