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Silicon Carbide and Related Materials 2009

Materials Science Forum Volumes 645 - 648

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• p-5 Sponsors   [ 23 K ]
• p-4 Committees   [ 33 K ]
• p-2 Preface   [ 16 K ]
• p3 High Quality 100mm 4H-SiC Substrates with Low Resistivity   [ 333 K ]
  Authors: Thomas L. Straubinger, Erwin Schmitt, S. Storm, Michael Vogel, Arnd Dietrich Weber, Andreas Wohlfart
• p9 Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality   [ 1 M ]
  Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi
• p13 High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt   [ 236 K ]
  Authors: Katsunori Danno, Hiroaki Saitoh, Akinori Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Yoichiro Kawai
• p17 Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method   [ 574 K ]
  Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek
• p21 Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside   [ 357 K ]
  Authors: Katarzyna Racka, Emil Tymicki, Krzysztof Grasza, Marcin Raczkiewicz, Rafał Jakieła, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Andrzej Brzozowski, Ryszard Diduszko, Miroslaw Piersa, Kinga Kościewicz, Mariusz Pawłowski, Jerzy Krupka
• p25 Status of 3" 6H SiC Bulk Crystal Growth   [ 221 K ]
  Authors: Yuri N. Makarov, D.P. Litvin, A.V. Vasiliev, A.S. Segal, S.S. Nagalyuk, H. Helava, M.I. Voronova, K.D. Scherbachov
• p29 Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction   [ 334 K ]
  Authors: Rainer Hock, Katja Konias, L. Perdicaro, Andreas Magerl, Philip Hens, Peter J. Wellmann
• p33 Solution Growth and Crystallinity Characterization of Bulk 6H-SiC   [ 1 M ]
  Authors: Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Akihiro Yauchi
• p37 Non-Polar SiC Crystal Growth with m-Plane(1-100) and a-Plane(11-20) by PVT Method   [ 471 K ]
  Authors: Im Gyu Yeo, Tae Woo Lee, Won Jae Lee, Byoung Chul Shin, Il Soo Kim, Jung Woo Choi, Kap Ryeol Ku, Young Hee Kim, Shigehiro Nishino
• p41 Purifying Mechanism in the Acheson Process - A Thermodynamic Study   [ 201 K ]
  Authors: Li Ying Zhou, Rainer Telle
• p45 Growth of Single-Phase 2H-SiC Layers by Vapor–Liquid–Solid Process   [ 553 K ]
  Authors: Mamoru Imade, Shin Takeuchi, Masahiro Uemura, Masashi Yoshimura, Yasuo Kitaoka, Takatomo Sasaki, Yusuke Mori, Shinroh Itoh, Hiroyuki Okuda, Masanobu Yamazaki
• p49 Overview of 3C-SiC Crystalline Growth   [ 679 K ]
  Authors: Gabriel Ferro