Silicon Carbide and Related Materials 2009
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High Quality 100mm 4H-SiC Substrates with Low Resistivity Authors: Thomas L. Straubinger, Erwin Schmitt, S. Storm, Michael Vogel, Arnd Dietrich Weber, Andreas Wohlfart |
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Growth and Characterization of Large-Diameter 4H-SiC Crystals with High Crystal Quality Authors: Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Hiroshi Tsuge, Takashi Aigo, S. Satoh, Hirokatsu Yashiro, Taizo Hoshino, Hosei Hirano, Wataru Ohashi |
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High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt Authors: Katsunori Danno, Hiroaki Saitoh, Akinori Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Yoichiro Kawai |
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Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method Authors: Emil Tymicki, Krzysztof Grasza, Katarzyna Racka, Marcin Raczkiewicz, Tadeusz Łukasiewicz, Maciej Gała, Kinga Kościewicz, Ryszard Diduszko, Rafał Bożek |
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Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside Authors: Katarzyna Racka, Emil Tymicki, Krzysztof Grasza, Marcin Raczkiewicz, Rafał Jakieła, Michal Kozubal, Elzbieta Jurkiewicz-Wegner, Andrzej Brzozowski, Ryszard Diduszko, Miroslaw Piersa, Kinga Kościewicz, Mariusz Pawłowski, Jerzy Krupka |
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Status of 3" 6H SiC Bulk Crystal Growth Authors: Yuri N. Makarov, D.P. Litvin, A.V. Vasiliev, A.S. Segal, S.S. Nagalyuk, H. Helava, M.I. Voronova, K.D. Scherbachov |
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Authors: Rainer Hock, Katja Konias, L. Perdicaro, Andreas Magerl, Philip Hens, Peter Wellmann |
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