Paper Title:
Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
  Abstract

This paper investigates the transient induced currents by energetic carbon ions in 6H-SiC MOSFETs and the carrier dynamic response due to such a heavy ion collision is simulated by Technology Computer Aided Design (TCAD). It was found that a heavy ion strike induces a bipolar effect on the transistor, whereby the current transients can vary in both polarities. And this has been attributed to the inherent in the MOSFET is a parasitic bipolar junction transistor.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1013-1016
DOI
10.4028/www.scientific.net/MSF.645-648.1013
Citation
K. K. Lee, J. S. Laird, T. Ohshima, S. Onoda, T. Hirao, H. Itoh, "Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation", Materials Science Forum, Vols. 645-648, pp. 1013-1016, 2010
Online since
April 2010
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Price
$32.00
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