Paper Title:

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Periodical Materials Science Forum (Volumes 645 - 648)
Main Theme Silicon Carbide and Related Materials 2009
Edited by Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages 1017-1020
DOI 10.4028/
Citation Anant K. Agarwal et al., 2010, Materials Science Forum, 645-648, 1017
Online since April, 2010
Authors Anant K. Agarwal, Qing Chun Jon Zhang, Robert Callanan, Craig Capell, Albert A. Burk, Michael J. O'Loughlin, John W. Palmour, Victor Temple, Robert E. Stahlbush, Joshua D. Caldwell, Heather O'Brian, Charles J. Scozzie
Keywords Bipolar Turn Off Thyristor
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In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved.

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