Paper Title:
9 kV, 1 cm2 SiC Gate Turn-Off Thyristors
  Abstract

In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1017-1020
DOI
10.4028/www.scientific.net/MSF.645-648.1017
Citation
A. K. Agarwal, Q. C. J. Zhang, R. Callanan, C. Capell, A. A. Burk, M. J. O'Loughlin, J. W. Palmour, V. Temple, R. E. Stahlbush, J. D. Caldwell, H. O'Brian, C. Scozzie, "9 kV, 1 cm2 SiC Gate Turn-Off Thyristors", Materials Science Forum, Vols. 645-648, pp. 1017-1020, 2010
Online since
April 2010
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$32.00
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