Paper Title:
10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
  Abstract

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1025-1028
DOI
10.4028/www.scientific.net/MSF.645-648.1025
Citation
Q. C. J. Zhang, R. Callanan, A. K. Agarwal, A. A. Burk, M. J. O'Loughlin, J. W. Palmour, C. Scozzie, "10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 1025-1028, 2010
Online since
April 2010
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Price
$32.00
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