Paper Title:
2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability
  Abstract

This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown voltage BVCEO=2.3 kV at T=25 °C. The corresponding room temperature specific on-resistance RSP-ON=4.5 mΩcm2 is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The on-state and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VCE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 μs short-circuit capability with VCE=800 V was shown for the 1200 V BJT.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1033-1036
DOI
10.4028/www.scientific.net/MSF.645-648.1033
Citation
M. Domeij, C. Zaring, A. O. Konstantinov, M. Nawaz, J. O. Svedberg, K. Gumaelius, I. Keri, A. Lindgren, B. Hammarlund, M. Östling, M. Reimark, "2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability", Materials Science Forum, Vols. 645-648, pp. 1033-1036, 2010
Online since
April 2010
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