Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 1049-1052 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.1049 |
| Citation | Pavel A. Ivanov et al., 2010, Materials Science Forum, 645-648, 1049 |
| Online since | April, 2010 |
| Authors | Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Anant K. Agarwal, Q. Jon Zhang |
| Keywords | Bipolar Junction Transistor (BJT) |
| Price | US$ 28,- |
In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.