Paper Title:

Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode

Periodical Materials Science Forum (Volumes 645 - 648)
Main Theme Silicon Carbide and Related Materials 2009
Edited by Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages 1049-1052
DOI 10.4028/www.scientific.net/MSF.645-648.1049
Citation Pavel A. Ivanov et al., 2010, Materials Science Forum, 645-648, 1049
Online since April, 2010
Authors Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Anant K. Agarwal, Q. Jon Zhang
Keywords Bipolar Junction Transistor (BJT)
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Abstract

In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.