Paper Title:
Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode
  Abstract

In this paper, very fast switch-off of high voltage 4H–SiC npn Bipolar Junction Transistors (BJTs) driven in deep saturation regime is reported. It is shown that the switch-off time can be as short as 4 ns if a reverse base current pulse is applied that provides forced minority carrier sweep out from the base.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1049-1052
DOI
10.4028/www.scientific.net/MSF.645-648.1049
Citation
P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, A. K. Agarwal, Q. J. Zhang, "Fast Switch-Off of High Voltage 4H–SiC npn BJTs from Deep Saturation Mode", Materials Science Forum, Vols. 645-648, pp. 1049-1052, 2010
Online since
April 2010
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