Paper Title:
3kV 4H-SiC Thyristors for Pulsed Power Applications
  Abstract

Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are attractive candidates for pulsed power applications. With a thinner blocking layer almost an order of magnitude smaller than its Silicon (Si) counterpart, these devices promise very fast turn-on capabilities as full conductivity modulation occurs >10 times faster than comparable silicon thyristors, low leakage currents at high junction temperatures and at high voltage, and much lower forward voltage drop at high pulse currents. Our progress on the development of large area (4mm x 4mm) SiC thyristors is presented in this paper.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1053-1056
DOI
10.4028/www.scientific.net/MSF.645-648.1053
Citation
A. Elasser, P. A. Losee, S. Arthur, Z. Stum, K. Matocha, G. Dunne, J. L. Garrett, M. Schutten, D. Brown, "3kV 4H-SiC Thyristors for Pulsed Power Applications", Materials Science Forum, Vols. 645-648, pp. 1053-1056, 2010
Online since
April 2010
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Price
$32.00
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