Paper Title:
Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT
  Abstract

In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1065-1067
DOI
10.4028/www.scientific.net/MSF.645-648.1065
Citation
T. Tajima, T. Nakamura, Y. Watabe, M. Satoh, T. Nakamura, "Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT", Materials Science Forum, Vols. 645-648, pp. 1065-1067, 2010
Online since
April 2010
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Price
$32.00
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