Paper Title:
Impact Ionization in 4H-SiC Nuclear Radiation Detectors
  Abstract

Nonequilibrium-charge transport has been studied in a structure with a Schottky barrier fabricated on a CVD-grown n-4H-SiC film. The charge introduced by single α-particles was recorded by nuclear spectrometric techniques. The maximum electric field strength in the structure was 1.1 MV/cm. The recorded charge as a function of the reverse bias applied to the structure shows a superlinear rise. Simultaneously, the width of the amplitude spectrum increased superlinearly, too. The observed effect is attributed to the initial stage of impact ionization. The manifestation of the process at unusually low fields (~1.0 MV/cm) is accounted for by specific features of the charge generation process. The carriers generated by a α-particle are found to be originally "heated". The results obtained allow prognostication of the appearance of SiC detectors of the "proportional counter" type in the near future. This is enabled by the advances made in the field of high-voltage electronics in obtaining in practice the required electric field strengths.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1077-1080
DOI
10.4028/www.scientific.net/MSF.645-648.1077
Citation
A. M. Ivanov, M. G. Mynbaeva, A. V. Sadokhin, N. B. Strokan, A. A. Lebedev, "Impact Ionization in 4H-SiC Nuclear Radiation Detectors", Materials Science Forum, Vols. 645-648, pp. 1077-1080, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Evgenia V. Kalinina, Nikita B. Strokan, Alexander M. Ivanov, A. Sadohin, A. Azarov, V. Kossov, R. Yafaev, S. Lashaev
Abstract:The detector structures based on Al ion-implanted p+-n junctions in 4H-SiC have been manufactured and tested at temperatures up to 170oC by...
941
Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, Vitalii V. Kozlovski
Abstract:The charge collection efficiency (ССЕ) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm-2 has been...
961
Authors: Alexander M. Ivanov, Evgenia V. Kalinina, Nikita B. Strokan, Alexander A. Lebedev
Abstract:The spectrometric characteristics of detectors based on 4H-SiC films with ion-doped p+–n junctions in a temperature range from 25 to 375 °C...
849
Authors: Alexander M. Ivanov, Nikita B. Strokan, Alexander A. Lebedev, Vitalii V. Kozlovski
Abstract:The effect of a cycle "introduction of defects – annealing – introduction of defects" on the SiC properties has been studied to know the...
853
Authors: Donatella Puglisi, Gaetano Foti, Giuseppe Bertuccio
Abstract:The achievement of nuclear detectors in Silicon Carbide imposes severe constraints on the electronic quality and thickness of the material...
857