Paper Title:
Characterisation of Low Noise 4H-SiC Avalanche Photodiodes
  Abstract

We report photomultiplication, M, and excess noise, F, measurements at 244nm and 325nm in two 4H-SiC separate absorption and multiplication region avalanche photodiodes (SAM-APDs). Sample A is a 4 x 4 array of 16 SAM-APDs. This structure possesses a relatively thin absorption layer resulting in more mixed injection, and consequently higher noise than sample B. The absorption layer of sample B does not deplete, so 244nm light results in >99% absorption outside the depletion region resulting in very low excess noise. Both structures exhibit very low dark currents and abrupt uniform breakdown at 194V and 624V for samples A and B respectively. Excess noise is treated using a local model [1]. The effective ratio of impact ionisation coefficients (keff) is approximately 0.007, this indicates a significant reduction in the electron impact ionisation coefficient, α, compared to prior work [2-5]. We conclude that the value of α will require modification if thick silicon carbide structures are to fit the local model for multiplication and excess noise.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1081-1084
DOI
10.4028/www.scientific.net/MSF.645-648.1081
Citation
J. E. Green, W.S. Loh, J.P.R. David, R.C. Tozer, S. I. Soloviev, P. M. Sandvik, "Characterisation of Low Noise 4H-SiC Avalanche Photodiodes", Materials Science Forum, Vols. 645-648, pp. 1081-1084, 2010
Online since
April 2010
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