Paper Title:
Silicon Carbide APD with Improved Detection Sensitivity and Stability
  Abstract

This paper describes a novel design to achieve sensitive and stable performance of an avalanche photodiode based on silicon carbide material. The design includes a field-stopping layer with limited extension, and junction termination, in order to achieve avalanche multiplication only in the central region of the device. Also, sensitivity is increased by the achievement of a rectangular field distribution, and full depletion of the absorption region by the onset of avalanche multiplication. Evaluation of devices produced with this design show that a low leakage current and a sharp and stable avalanche breakdown point around 120V is achieved. Optical responsivity to radiation of wavelength 200 to 400 nm is shown to increase with increasing applied reverse bias, until a factor of 8 increase is achieved at the breakdown voltage.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1089-1092
DOI
10.4028/www.scientific.net/MSF.645-648.1089
Citation
M. Bakowski, A. Schöner, I. Petermann, S. Savage, "Silicon Carbide APD with Improved Detection Sensitivity and Stability", Materials Science Forum, Vols. 645-648, pp. 1089-1092, 2010
Online since
April 2010
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Price
$32.00
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