Paper Title:
SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors
  Abstract

Switching devices based on wide band gap materials as SiC o er a signi cant perfor- mance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level perfor- mance, i.e. eciency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1101-1106
DOI
10.4028/www.scientific.net/MSF.645-648.1101
Citation
J. Biela, M. Schweizer, S. Waffler, B. Wrzecionko, J. W. Kolar, "SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors", Materials Science Forum, Vols. 645-648, pp. 1101-1106, 2010
Online since
April 2010
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Price
$32.00
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