Paper Title:
Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing
  Abstract

Fully monolithic, transimpedance and differential voltage amplifiers are reported in this paper based on 6H-SiC, n-channel, depletion-mode JFETs. The single-stage transimpedance amplifier has a low-frequency gain of ~222 kΩ at room temperature, with ~2% gain matching for copies on a 6-mm x 6-mm die. The transimpedance gain is set by an integrated resistor and is ~1.1 MΩ at 450oC. The single-stage, differential voltage amplifier has a typical gain-bandwidth of ~2.8 MHz at 600oC and a typical open-loop voltage gain of ~35.8 dB at 25oC, with less than 1-dB gain variation from 25-600oC.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1107-1110
DOI
10.4028/www.scientific.net/MSF.645-648.1107
Citation
A. Patil, X. A. Fu, M. Mehregany, S. Garverick, "Fully-Integrated 6H-SiC JFET Amplifiers for High-Temperature Sensing", Materials Science Forum, Vols. 645-648, pp. 1107-1110, 2010
Online since
April 2010
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Price
$32.00
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