Paper Title:
Performance and Reliability of SiC MOSFETs for High-Current Power Modules
  Abstract

We address the two critical challenges that currently limit the applicability of SiC MOSFETs in commercial power conversion systems: high-temperature gate oxide reliability and high total current rating. We demonstrate SiC MOSFETs with predicted gate oxide reliability of >106 hours (100 years) operating at a gate oxide electric field of 4 MV/cm at 250°C. To scale to high total currents, we develop the Power Overlay planar packaging technique to demonstrate SiC MOSFET power modules with total on-resistance as low as 7.5 m. We scale single die SiC MOSFETs to high currents, demonstrating a large area SiC MOSFET (4.5mm x 4.5 mm) with a total on-resistance of 30 m, specific on-resistance of 5 m-cm2 and blocking voltage of 1400V.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1123-1126
DOI
10.4028/www.scientific.net/MSF.645-648.1123
Citation
K. Matocha, P. A. Losee, A. Gowda, E. Delgado, G. Dunne, R. Beaupre, L. Stevanovic, "Performance and Reliability of SiC MOSFETs for High-Current Power Modules", Materials Science Forum, Vols. 645-648, pp. 1123-1126, 2010
Online since
April 2010
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Price
$32.00
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