Paper Title:
Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material
  Abstract

This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible with SiC. This paper reports the simulated and experimental results as well and a practical and simplified vision on the principles of thermally compensated voltage reference circuits, usually named bandgap references. For our demonstration, we have used SiC Schottky diodes. The influence of the barrier height and the ideality factor on the voltage reference and a comparison between simulated and experimental results are also presented.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1131-1134
DOI
10.4028/www.scientific.net/MSF.645-648.1131
Citation
V. Banu, P. Brosselard, X. Jordá, P. Godignon, J. Millan, "Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material", Materials Science Forum, Vols. 645-648, pp. 1131-1134, 2010
Online since
April 2010
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Price
$32.00
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