Paper Title:
Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C
  Abstract

The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 °C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 °C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 °C to +500 °C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1135-1138
DOI
10.4028/www.scientific.net/MSF.645-648.1135
Citation
P. G. Neudeck, M. J. Krasowski, L. Y. Chen, N. F. Prokop, "Characterization of 6H-SiC JFET Integrated Circuits over a Broad Temperature Range from -150 °C to +500 °C ", Materials Science Forum, Vols. 645-648, pp. 1135-1138, 2010
Online since
April 2010
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Price
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