Paper Title:
NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications
  Abstract

Normally-off 4H-SiC MOSFETs are used to build NMOS logic gates intended for high temperature operation. The logic gates are characterized between 25°C and 500°C. Stable gate operation for more than 200h at 400°C in air is demonstrated. The excellent MOS reliability is quantified using I-V curves to dielectric breakdown and constant voltage stress to breakdown at 400°C. Although the effective tunneling barrier height B for electrons lowers to 2eV at 400°C, the extrapolated lifetime from constant voltage stress to breakdown measurements is longer than 105h at 400°C for typical logic gate operating field strength of 2MV/cm.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1143-1146
DOI
10.4028/www.scientific.net/MSF.645-648.1143
Citation
M. Le-Huu, F. F. Schrey, M. Grieb, H. Schmitt, V. Häublein, A. J. Bauer, H. Ryssel, L. Frey, "NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications ", Materials Science Forum, Vols. 645-648, pp. 1143-1146, 2010
Online since
April 2010
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Price
$32.00
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