Paper Title:
Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET
  Abstract

The 50W Quasi-resonant mode SMPS which adopted a normally-on-type SiC JFET as a switch has been designed and characterized. A simple decision circuit and an auxiliary power supply was utilized to safely protect the JFET from an in-rush current at initial operation stage and to provide sufficient negative voltage for a complete JFET drive. Even without a refine engineering, the SMPS showed 96% efficiency at a full load state.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1151-1154
DOI
10.4028/www.scientific.net/MSF.645-648.1151
Citation
I. H. Kang, S. J. Joo, W. Bahng, S. C. Kim, N. K. Kim, "Design and Characterization of 50W Switch Mode Power Supply Using Normally-On SiC JFET", Materials Science Forum, Vols. 645-648, pp. 1151-1154, 2010
Online since
April 2010
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Price
$32.00
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