Paper Title:
A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT
  Abstract

Looking back to the development of inverters using SiC switches, it appears that SiC devices do not behave like their silicon counterparts. Their ability to operate at high temperature makes them attractive. Developing drivers suitable for 200 °C operation is not straightforward. In a perspective of high integration and large power density, it is wise to consider a monolithic integration of the driver parts for the sake of reliability. Silicon is not suitable for high ambient temperature; silicon-oninsulator offers better performances and presents industrial perspectives. The paper focuses on a SiC BJT driver: it processes logical orders from outside, drives adequately the BJT to turn it either on or off, monitors the turn-off and turn-on state of the device, and acts accordingly to prevent failure. SiC BJT imposes specific performances different from the well known ones of SiC JFET or MOSFET. The paper addresses a preliminary analysis of a SOI driver, anticipating the behavior of SiC-BJT and the change in behavior at high temperature. A discret driver has been designed and fabricated. Elementary functional blocks have been validated, and a BJT converter successfully operated at high temperature with high efficiency ( = 88%).

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1155-1158
DOI
10.4028/www.scientific.net/MSF.645-648.1155
Citation
D. Tournier, P. Bevilacqua, P. Brosselard, D. Planson, "A Step Toward High Temperature Intelligent Power Modules Using 1.5kV SiC-BJT", Materials Science Forum, Vols. 645-648, pp. 1155-1158, 2010
Online since
April 2010
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Price
$32.00
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