Paper Title:
Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
  Abstract

Lateral normally-on dual gates MESFETs withstanding a drain/source voltage in excess of 200V have been fabricated on semi-insulating 4H-SiC substrate. This paper reports on the fabrication, DC characterization and in-circuit behavior of the MESFETs. Temperature dependent DC characterization has been carried out up to 473K. The performances of basic analog circuits such as an amplifier and a clock, using these MESFETs, are detailed and analyzed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1159-1162
DOI
10.4028/www.scientific.net/MSF.645-648.1159
Citation
A. Devie, D. Tournier, P. Godignon, M. Vellvehi, J. Montserrat, X. Jordá, "Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits", Materials Science Forum, Vols. 645-648, pp. 1159-1162, 2010
Online since
April 2010
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Price
$32.00
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