Paper Title:
System Improvements of Photovoltaic Inverters with SiC-Transistors
  Abstract

In this paper the system improvements of PV-inverters with SiC-transistors are demonstrated. The basic characteristics of engineering prototypes of normally-off SiC-JFETs and SiC-MOSFETs were measured and their differences in the application are considered. To demonstrate the improvement in PV-inverter performance, a 5 kW single-phase and a three-phase full bridge inverter with normally-off SiC-JFETs were developed at Fraunhofer ISE. Different switching frequencies up to 144 kHz were applied and the impact on production costs and inverter performance was rated under the aspects of an industrial product development. This means, the influences on the efficiency and power density. In this work, a world record in PV-inverter efficiency of 99 % was achieved in a single-phase inverter and for the three-pase inverter, the power density was tripled with respect to commercially available state of the art PV-inverters.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1171-1176
DOI
10.4028/www.scientific.net/MSF.645-648.1171
Citation
D. Kranzer, F. Reiners, C. Wilhelm, B. Burger, "System Improvements of Photovoltaic Inverters with SiC-Transistors", Materials Science Forum, Vols. 645-648, pp. 1171-1176, 2010
Online since
April 2010
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Price
$32.00
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