Paper Title:
Discussion of Turn on Current Peaks of SiC Switches in Half Bridges
  Abstract

The optimal control parameters for semiconductor switches at the development state with new materials and structures are often unidentified. By using those sample switches with a gate control set by investigating one switch only, parasitic influences might lead to increased switching losses in half bridges [1, 2]. The focus of this paper is on an effect at turn on by using for example normally on JFET as high and low side switch. At this an increased current peak might occur which leads to higher switching losses. By adjusting the gate voltage losses can be economized.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1177-1180
DOI
10.4028/www.scientific.net/MSF.645-648.1177
Citation
I. Koch, W. R. Canders, "Discussion of Turn on Current Peaks of SiC Switches in Half Bridges", Materials Science Forum, Vols. 645-648, pp. 1177-1180, 2010
Online since
April 2010
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$32.00
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