Paper Title:
AlN Substrates and Epitaxy Results
  Abstract

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1183-1186
DOI
10.4028/www.scientific.net/MSF.645-648.1183
Citation
Y. N. Makarov, T.Y. Chemekova, O.V. Avdeev, N. Mokhov, S.S. Nagalyuk, M.G. Ramm, H. Helava, "AlN Substrates and Epitaxy Results", Materials Science Forum, Vols. 645-648, pp. 1183-1186, 2010
Online since
April 2010
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Price
$32.00
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