AlN Substrates and Epitaxy Results |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 1183-1186 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.1183 |
| Citation | Yuri N. Makarov et al., 2010, Materials Science Forum, 645-648, 1183 |
| Online since | April, 2010 |
| Authors | Yuri N. Makarov, T.Yu. Chemekova, O.V. Avdeev, N. Mokhov, S.S. Nagalyuk, M.G. Ramm, H. Helava |
| Keywords | Bulk Crystal Growth |
| Abstract | AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc. |
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