Paper Title:
Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
  Abstract

Free standing AlN wafers were grown on pre-patterned and in situ patterned 4H-SiC substrates by a physical vapor transport method. It is based on the coalescence of AlN microrods, which evolve from the apex of SiC pyramids grown on the SiC substrate during a temperature ramp up for in situ patterned substrate and SiC pyramids formed by reactive ion etching (RIE). This process yields stress-free (according XRD and Raman results) AlN single crystals with a thickness up to 400 µm and low dislocation density.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1187-1190
DOI
10.4028/www.scientific.net/MSF.645-648.1187
Citation
G. R. Yazdi, K. Vassilevski, J. M. Córdoba, D. Gogova, I. P. Nikitina, M. Syväjärvi, M. Odén, N. G. Wright, R. Yakimova, "Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 1187-1190, 2010
Online since
April 2010
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$32.00
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