Paper Title:
Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates
  Abstract

h-BN layers were deposited on α-SiC substrates by CVD at high temperature (1500-1900°C) using B2H6 and NH3 diluted in Ar. Growth rates were in the 6-10 µm/h range. In all the conditions studied, the BN as deposited layers were found to be translucent to light, some having a light whitish aspect and other a more yellowish one. It was also observed that the deposit was not always adhesive. µ-Raman and TEM characterization showed that the layers were nano-crystalline with crystallite size < 10 nm. The growth rate was found temperature and N/B ratio dependent due to an N limited growth regime which is more pronounced above 1700°C.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1191-1194
DOI
10.4028/www.scientific.net/MSF.645-648.1191
Citation
G. Younes, G. Ferro, M. Soueidan, A. Brioude, F. Cauwet, "Growth of Nanocrystalline Translucent h-BN Films Deposited by CVD at High Temperature on SiC Substrates", Materials Science Forum, Vols. 645-648, pp. 1191-1194, 2010
Online since
April 2010
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$32.00
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