Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 1199-1202 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.1199 |
| Citation | G. Gálvez de la Puente et al., 2010, Materials Science Forum, 645-648, 1199 |
| Online since | April, 2010 |
| Authors | G. Gálvez de la Puente, Oliver Erlenbach, Jorge Andres Guerra, T. Hupfer, M. Steidl, Francisco De Zela, Roland Weingärtner, Albrecht Winnacker |
| Keywords | Impedance Spectroscopy, Magnetron Sputtering, SiC AlN Alloy |
| Abstract | Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC) (AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region. |
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