Paper Title:
Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering
  Abstract

Amorphous pseudobinary (SiC)1 x(AlN)x thin films have been produced by radio frequency dual magnetron sputtering from bulk SiC and AlN targets. For each target the emission characteristic, i.e. the spatial variation of the deposition rate was determined, in order to predict thickness distribution and spatial composition variation for the (SiC) (AlN) alloy. Impedance spectroscopy shows a high resistivity of the films in the SiC rich region, decreasing significantly towards the AlN rich region.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1199-1202
DOI
10.4028/www.scientific.net/MSF.645-648.1199
Citation
G. Gálvez de la Puente, O. Erlenbach, J. A. Guerra, T. Hupfer, M. Steidl, F. De Zela, R. Weingärtner, A. Winnacker, "Quality Control and Electrical Properties of Thin Amorphous (SiC)1-x(AlN)x Films Produced by Radio Frequency Dual Magnetron Sputtering", Materials Science Forum, Vols. 645-648, pp. 1199-1202, 2010
Online since
April 2010
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$32.00
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