Paper Title:
Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC
  Abstract

Within the scope of the Harrison’s bond orbital model the spontaneous polarization, high- and low frequency dielectric constants are obtained in an analytical form. Theoretical results are in a reasonable agreement with the experimental data available and the numerical calculations based on the ab initio methods.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1203-1206
DOI
10.4028/www.scientific.net/MSF.645-648.1203
Citation
S. Y. Davydov, A. A. Lebedev, "Calculations of the Spontaneous Polarizations and Dielectric Constants for AlN, GaN, InN, and SiC", Materials Science Forum, Vols. 645-648, pp. 1203-1206, 2010
Online since
April 2010
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