Paper Title:
2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility
  Abstract

Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1207-1210
DOI
10.4028/www.scientific.net/MSF.645-648.1207
Citation
A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, J. Millan, P. Godignon, "2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility", Materials Science Forum, Vols. 645-648, pp. 1207-1210, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: N. Biyikli, Cole W. Litton, J. Xie, Y.T. Moon, F. Yun, C.G. Stefanita, S. Bandyopadhyay, J.R. Meyer, Hadis Morkoç
Abstract:Carrier transport properties of AlGaN/GaN heterostructures have been analyzed with the quantitative mobility spectrum analysis (QMSA)...
1533
Authors: T. Paul Chow, W. Huang, T. Khan, K. Matocha, Y. Wang
Abstract:GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaN interface. With optimized anneal conditions, an...
1263
Authors: Young Hwan Choi, Ji Yong Lim, Kyu Heon Cho, Young Shil Kim, Min Koo Han
Abstract:AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any...
971
Authors: Han Guo, Wu Tang, Wei Zhou, Chi Ming Li
Chapter 18: Tooling Testing and Evaluation of Materials
Abstract:The electrical properties of AlGaN/GaN heterojunction high electron mobility transistor (HEMT) are simulated by using sentaurus software....
2393
Authors: Wael Jatal, Katja Tonisch, Uwe Baumann, Frank Schwierz, Jörg Pezoldt
Chapter 10: Device and Application
Abstract:Al0.35Ga0.65N/GaN- and Al0.2Ga0.8N/AlN/GaN-heterostructures high electron mobility transistors (HEMTs) with a gate length (LG) varying from...
1115