Paper Title:
Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs
  Abstract

We have fabricated SiO2 passivated AlGaN/GaN HEMTs and employed As+ ion implantation on the passivation layer and optimized the implantation energy. After As+ ion implantation with 120 keV energy and 1 × 1014 /cm2 dose, the maximum drain current, maximum transconductance and the breakdown voltage increased to 419.6 mA/mm, 87.9 mS/mm and 698 V while those of the conventional device was 317.0 mA/mm, 65.1 mS/mm and 639 V, respectively.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1223-1226
DOI
10.4028/www.scientific.net/MSF.645-648.1223
Citation
J. Y. Lim, Y. H. Choi, Y. S. Kim, M. K. Kim, M. K. Han, " Energy Optimization of As+ Ion Implantation on SiO2 Passivation Layer of AlGaN/GaN HEMTs ", Materials Science Forum, Vols. 645-648, pp. 1223-1226, 2010
Online since
April 2010
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