Paper Title:
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth
  Abstract

This research is focused on the influence of high C/Si ratios and low pressure on n-type doping concentration and surface defects of 4H-SiC C-face epilayers. N-type doping concentration decreases as C/Si ratio increases from 3.0 to 4.0 and pressure reduces from 100 mbar to 50 mbar; defect densities decrease as pressure increases at both C/Si ratios of 3.0 and 4.0. RMS roughness is about 0.21 nm for all C-face samples, independent of C/Si ratios of 3.0 and 4.0 and pressure from 50 mbar to 100 mbar. However, the influence of growth temperature on doping concentration and surface defects can not be clearly observed in this work.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
123-126
DOI
10.4028/www.scientific.net/MSF.645-648.123
Citation
K. Y. Lee, S. Y. Lee, C. F. Huang, "Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth", Materials Science Forum, Vols. 645-648, pp. 123-126, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Örjan Danielsson, Urban Forsberg, Erik Janzén
137
Authors: Ho Keun Song, Jeong Hyun Moon, Jeong Hyuk Yim, Hyeong Joon Kim
Abstract:In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron doping. Homoepitaxial growth of iron-doped 4H-SiC...
215
Authors: Krista Chindanon, Huang De Lin, Galyna Melnychuk, Yaroslav Koshka
Abstract:In this work, nitrogen doping was investigated during the low-temperature halo-carbon epitaxial growth of 4H-SiC on Si- and C-faces. The...
159
Authors: Giuseppe Condorelli, Marco Mauceri, Giuseppe Pistone, L.M.S. Perdicaro, Giuseppe Abbondanza, F. Portuese, Gian Luca Valente, Danilo Crippa, Filippo Giannazzo, Francesco La Via
Abstract:A process has been developed to grow multi-epy high doped structure. Trichlorosilane (TCS) and Ethylene have been used as precursor; Nitrogen...
127
Authors: Lin Dong, Guo Sheng Sun, Jun Yu, Guo Guo Yan, Wan Shun Zhao, Lei Wang, Xin He Zhang, Xi Guang Li, Zhan Guo Wang
Chapter 3: Epitaxial Growth 4H SiC
Abstract:We present our recent results on of 10 × 100 mm 4H-SiC epitaxy by a warm-wall planetary reactor at a growth rate of 10 μm/h. The epilayers...
239