Paper Title:
Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices
  Abstract

A physical and electrical analysis of Si/SiC heterojunctions formed by layer transfer based on the smartcut® process is presented in this paper. AFM and SEM have revealed a high bonding quality when Si wafers are transferred to SiC on-axis wafers. XRD points to the fact that the layers are monocrystalline in nature. A surface AFM analysis of the bonded wafers demonstrated a smooth surface (rms = 5.8 nm) suitable for semiconductor device fabrication. Capacitors have been fabricated from the Si/SiC heterojunctions, which have been totally oxidised. Oxidised Si/SiC structures yielded a lower density of interface states than conventional thermal oxidation techniques.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
1243-1246
DOI
10.4028/www.scientific.net/MSF.645-648.1243
Citation
M. R. Jennings, A. Pérez-Tomás, O. J. Guy, M. Lodzinski, P. M. Gammon, S. E. Burrows, J. A. Covington, P. A. Mawby, "Silicon-on-SiC, a Novel Semiconductor Structure for Power Devices", Materials Science Forum, Vols. 645-648, pp. 1243-1246, 2010
Online since
April 2010
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Price
$32.00
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