Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Ferro, Gabriel; Cauwet, François; Dazord , Jacques; Soulière, Veronique; Lorenzzi, Jean; Jegenyes, Nikoletta

Paper Titles

Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC, p.111
Short-Length Step Morphology on 4° Off Si-Face Epitaxial Surface Grown on 4H-SiC Substrate, p.115
Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates, p.119
Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth, p.123
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature, p.127
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode, p.131
3C-SiC Heteroepitaxial Growth on Inverted Silicon Pyramids (ISP), p.135
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide, p.139
Growth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates, p.143

Home > Materials Science Forum > Silicon Carbide and Related Materials 2009 > Investigation of 3C-SiC(111) Homoepitaxial Growth...

Paper Title:

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

Periodical	Materials Science Forum (Volumes 645 - 648)
Main Theme	Silicon Carbide and Related Materials 2009
Edited by	Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages	127-130
DOI	10.4028/www.scientific.net/MSF.645-648.127
Citation	Nikoletta Jegenyes et al., 2010, Materials Science Forum, 645-648, 127
Online since	April, 2010
Authors	Nikoletta Jegenyes, Jean Lorenzzi, Veronique Soulière, Jacques Dazord, François Cauwet, Gabriel Ferro
Keywords	Chemical Vapor Deposition (CVD), Homoepitaxy, Roughness
Price	US$ 28,-

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Abstract

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.