Paper Title:
Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature
  Abstract

Starting from 3C-SiC(111) layers grown by Vapour-Liquid-Solid mechanism, homoepitaxial growth by Chemical Vapour Deposition was carried out on top of these seeds. The effect of the growth temperature and of the C/Si ratio in the gas phase was investigated on the surface morphology, the roughness and the defect density. It was found that the initial highly step-bunched surface of the VLS seeds could be greatly smoothen using appropriate conditions. These conditions were also found to reduce significantly the defect size and/or density at the surface.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
127-130
DOI
10.4028/www.scientific.net/MSF.645-648.127
Citation
N. Jegenyes, J. Lorenzzi, V. Soulière, J. Dazord , F. Cauwet, G. Ferro, "Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature", Materials Science Forum, Vols. 645-648, pp. 127-130, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Keishi Yamaguchi, Mutsumi Touge, Takayuki Nakano, Junji Watanabe
Abstract:Silicon carbide (SiC) single crystal has many advantages comparing with silicon single crystal, such as wide band-gap, hardness and various...
282
Authors: Xue Tao Yuan, Dong Bai Sun, Zhi Qiang Hua, Lei Wang
Abstract:The growth morphology and structure of deposits during the initial stages of amorphous Ni-P electrodeposition was studied using atomic force...
535
Authors: Kentaro Tamura, Masayuki Sasaki, Chiaki Kudou, Tamotsu Yamashita, Hideki Sako, Hirokuni Asamizu, Sachiko Ito, Kazutoshi Kojima, Makoto Kitabatake
Chapter II: Fundamental and Characterization of SiC
Abstract:On 4H-SiC Si-face substrates after H2 etching, the defect with “line” feature parallel to a step as “bunched-step line” was...
367
Authors: Veronique Soulière, Davy Carole, Massimo Camarda, Judith Wörle, Ulrike Grossner, Olivier Dezellus, Gabriel Ferro
1.2 Epitaxial and Thin Films Growth
Abstract:The aim of this study was to find conditions allowing the "natural" formation of a regular and controllable step bunched morphology on a...
163