Paper Title:
High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
  Abstract

High-speed solution growth using Si-Cr based melt has been performed on on-axis 4H-SiC(0001) at a high temperature of about 2000°C. The maximum growth rate for one-hour growth reaches to 1120 m/h, while the typical growth rate of growth for 2h is about 500 m/h. A large crystal that is about 25 mm in diameter and 1650 m in thickness can be obtained by growth for 5h. The crystal quality is confirmed to be homogeneous by X-ray diffraction and X-ray topography, because FWHM is less than 30 arcsec. Etch pit density of the threading dislocations in the grown crystal is 103-104 cm-2, and that of basal plane dislocation is 2×102-3×103 cm-2. Resistivity of the crystals grown by the solution growth is comparable to those of crystals grown by physical vapor transport technique.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
13-16
DOI
10.4028/www.scientific.net/MSF.645-648.13
Citation
K. Danno, H. Saitoh, A. Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Y. Kawai, "High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt", Materials Science Forum, Vols. 645-648, pp. 13-16, 2010
Online since
April 2010
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Price
$32.00
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