High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt
| Periodical | Materials Science Forum (Volumes 645 - 648) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 13-16 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.13 |
| Citation | Katsunori Danno et al., 2010, Materials Science Forum, 645-648, 13 |
| Online since | April, 2010 |
| Authors | Katsunori Danno, Hiroaki Saitoh, Akinori Seki, H. Daikoku, Y. Fujiwara, T. Ishii, H. Sakamoto, Yoichiro Kawai |
| Keywords | Bulk Crystal Growth, Liquid Phase Epitaxy (LPE) |
| Price | US$ 28,- |
High-speed solution growth using Si-Cr based melt has been performed on on-axis 4H-SiC(0001) at a high temperature of about 2000C. The maximum growth rate for one-hour growth reaches to 1120 m/h, while the typical growth rate of growth for 2h is about 500 m/h. A large crystal that is about 25 mm in diameter and 1650 m in thickness can be obtained by growth for 5h. The crystal quality is confirmed to be homogeneous by X-ray diffraction and X-ray topography, because FWHM is less than 30 arcsec. Etch pit density of the threading dislocations in the grown crystal is 103-104 cm-2, and that of basal plane dislocation is 2×102-3×103 cm-2. Resistivity of the crystals grown by the solution growth is comparable to those of crystals grown by physical vapor transport technique.
