Paper Title:
The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode
  Abstract

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
131-134
DOI
10.4028/www.scientific.net/MSF.645-648.131
Citation
J. Huguenin-Love, N. T. Lauer, R. J. Soukup, N. J. Ianno, Š. Kment, Z. Hubička, "The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode", Materials Science Forum, Vols. 645-648, pp. 131-134, 2010
Online since
April 2010
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