Paper Title:
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
  Abstract

3C-SiC films were grown on Si by VPE using CBr4 as the carbon source, at temperatures ranging between 1100 to 1250°C. XRD, TEM, AFM, and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous layer with hillocks on top is obtained above 1200°C. The shape and faceting of the islands are analyzed by AFM, showing (311) preferred facets.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
139-142
DOI
10.4028/www.scientific.net/MSF.645-648.139
Citation
G. Attolini, M. Bosi, F. Rossi, B. E. Watts, G. Salviati, G. Battistig, L. Dobos, B. Pécz, "SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide", Materials Science Forum, Vols. 645-648, pp. 139-142, 2010
Online since
April 2010
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Filippo Giannazzo, Giuseppe Nicotra, Ioannis Deretzis, Aurora Piazza, Gabriele Fisichella, S. Agnello, Corrado Spinella, Antonino La Magna, Fabrizio Roccaforte, Rositza Yakimova
5.1 Other Carbon Based Materials
Abstract:This paper presents an investigation of the morphological and structural properties of graphene (Gr) grown on SiC(000-1) by thermal...
1129