Paper Title:
Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
  Abstract

We investigate by means of Atomic Force Microscopy and Scanning Electron Microscopy the surface modifications of 3C-SiC(111)/Si epilayers induced by thermal annealing performed under hydrogen or argon atmosphere. We explore the effects of these treatments both on as grown and polished epilayers. Owing to an important initial surface roughness, the annealing has few impact on as grown films. On polished epilayers, a surface reorganization via the formation of a regular array of steps is evidenced. The proper effect of each gas on the surface reorganization is discussed.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
155-158
DOI
10.4028/www.scientific.net/MSF.645-648.155
Citation
M. Portail, T. Chassagne, S. Roy, C. Moisson, M. Zielinski, "Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates", Materials Science Forum, Vols. 645-648, pp. 155-158, 2010
Online since
April 2010
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$32.00
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