Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase |
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| Journal | Materials Science Forum (Volumes 645 - 648) |
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| Volume | Silicon Carbide and Related Materials 2009 |
| Edited by | Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller |
| Pages | 163-166 |
| DOI | 10.4028/www.scientific.net/MSF.645-648.163 |
| Citation | Olivier Kim-Hak et al., 2010, Materials Science Forum, 645-648, 163 |
| Online since | April, 2010 |
| Authors | Olivier Kim-Hak, Jean Lorenzzi, Nikoletta Jegenyes, Gabriel Ferro, Davy Carole, Patrick Chaudouët, Olivier Dezellus, Didier Chaussende, Jean Claude Viala, Christian Brylinski |
| Keywords | Liquid Phase Epitaxy (LPE), Polytype Stability |
| Abstract | The influence of nitrogen impurity on the stabilization of 3C-SiC polytype has been studied during vapour-liquid-solid (VLS) growth on 6H-SiC(0001) seed with Si-Ge melt. By changing the partial pressure of N2 during growth, it was found that the proportion of 3C-SiC inside the grown material increases with N2 partial pressure. 6H inclusions are only found for high purity (low N2 content) conditions. The possible interactions proposed to explain this effect are divided in two effects: i) lattice parameter modification and ii) surface induced lateral enlargement variation. A combination of both effects is suspected. |
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