Paper Title:
Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
  Abstract

The influence of nitrogen impurity on the stabilization of 3C-SiC polytype has been studied during vapour-liquid-solid (VLS) growth on 6H-SiC(0001) seed with Si-Ge melt. By changing the partial pressure of N2 during growth, it was found that the proportion of 3C-SiC inside the grown material increases with N2 partial pressure. 6H inclusions are only found for high purity (low N2 content) conditions. The possible interactions proposed to explain this effect are divided in two effects: i) lattice parameter modification and ii) surface induced lateral enlargement variation. A combination of both effects is suspected.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
163-166
DOI
10.4028/www.scientific.net/MSF.645-648.163
Citation
O. Kim-Hak, J. Lorenzzi, N. Jegenyes, G. Ferro, D. Carole, P. Chaudouët, O. Dezellus, D. Chaussende, J. C. Viala, C. Brylinski, "Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase", Materials Science Forum, Vols. 645-648, pp. 163-166, 2010
Online since
April 2010
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$32.00
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